Cluster Model of the Mechanism of Sensitivity of Gas Sensors Based on MIS Structures
- Авторлар: Litvinov A.V.1, Samotaev N.N.1, Etrekova M.O.1, Klishin Y.A.1, Korolev N.A.1
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Мекемелер:
- National Research Nuclear University MEPhI (Moscow Engineering Physics Institute)
- Шығарылым: Том 82, № 11 (2019)
- Беттер: 1499-1502
- Бөлім: Engineering Design of Nuclear Physics Equipment
- URL: https://journals.rcsi.science/1063-7788/article/view/195864
- DOI: https://doi.org/10.1134/S1063778819110115
- ID: 195864
Дәйексөз келтіру
Аннотация
A cluster model of the mechanism of sensitivity to gases is proposed, according to which the change in the electric capacity of a MIS sensor under the action of gas is caused by a change in the dielectric constant of the metal — dielectric transition layer under the action of gas molecules. The dielectric constant of the transition layer changes due to the rearrangement of the electronic structure of the traps.
Негізгі сөздер
Авторлар туралы
A. Litvinov
National Research Nuclear University MEPhI (Moscow Engineering Physics Institute)
Хат алмасуға жауапты Автор.
Email: AVLitvinov@mephi.ru
Ресей, Moscow, 115409
N. Samotaev
National Research Nuclear University MEPhI (Moscow Engineering Physics Institute)
Email: AVLitvinov@mephi.ru
Ресей, Moscow, 115409
M. Etrekova
National Research Nuclear University MEPhI (Moscow Engineering Physics Institute)
Email: AVLitvinov@mephi.ru
Ресей, Moscow, 115409
Yu. Klishin
National Research Nuclear University MEPhI (Moscow Engineering Physics Institute)
Email: AVLitvinov@mephi.ru
Ресей, Moscow, 115409
N. Korolev
National Research Nuclear University MEPhI (Moscow Engineering Physics Institute)
Email: AVLitvinov@mephi.ru
Ресей, Moscow, 115409
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