Cluster Model of the Mechanism of Sensitivity of Gas Sensors Based on MIS Structures


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Аннотация

A cluster model of the mechanism of sensitivity to gases is proposed, according to which the change in the electric capacity of a MIS sensor under the action of gas is caused by a change in the dielectric constant of the metal — dielectric transition layer under the action of gas molecules. The dielectric constant of the transition layer changes due to the rearrangement of the electronic structure of the traps.

Авторлар туралы

A. Litvinov

National Research Nuclear University MEPhI (Moscow Engineering Physics Institute)

Хат алмасуға жауапты Автор.
Email: AVLitvinov@mephi.ru
Ресей, Moscow, 115409

N. Samotaev

National Research Nuclear University MEPhI (Moscow Engineering Physics Institute)

Email: AVLitvinov@mephi.ru
Ресей, Moscow, 115409

M. Etrekova

National Research Nuclear University MEPhI (Moscow Engineering Physics Institute)

Email: AVLitvinov@mephi.ru
Ресей, Moscow, 115409

Yu. Klishin

National Research Nuclear University MEPhI (Moscow Engineering Physics Institute)

Email: AVLitvinov@mephi.ru
Ресей, Moscow, 115409

N. Korolev

National Research Nuclear University MEPhI (Moscow Engineering Physics Institute)

Email: AVLitvinov@mephi.ru
Ресей, Moscow, 115409

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