Email this article Short-Range Order in Amorphous and Crystalline Ferroelectric Hf0.5Zr0.5O2
- Authors: Erenburg S.B.1,2, Trubina S.V.1, Kvashnina K.O.3,4, Kruchinin V.N.5, Gritsenko V.V.5,6,7, Chernikova A.G.8, Markeev A.M.8
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Affiliations:
- Nikolaev Institute of Inorganic Chemistry, Siberian Branch
- Institute of Nuclear Physics, Siberian Branch
- ESRF
- HZDR
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Novosibirsk State University
- Novosibirsk State Technical University
- Moscow Institute of Physics and Technology
- Issue: Vol 126, No 6 (2018)
- Pages: 816-824
- Section: Order, Disorder, and Phase Transition in Condensed System
- URL: https://journals.rcsi.science/1063-7761/article/view/193227
- DOI: https://doi.org/10.1134/S1063776118060031
- ID: 193227
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Abstract
The microstructures of amorphous and polycrystalline ferroelectric Hf0.5Zr0.5O2 films are studied by X-ray spectroscopy and ellipsometry. EXAFS spectra demonstrate that the amorphous film consists of an “incompletely mixed” solid solution of metallic oxides HfO2 and ZrO2. After rapid thermal annealing, the mixed Hf0.5Zr0.5O2 oxide films have a more ordered polycrystalline structure, and individual Hf and Zr monoxide islands are formed in the films. These islands are several nanometers in size and have a structure that is similar to the monoclinic structure of HfO2 and ZrO2. The presence of the HfO2 and ZrO2 phases in the Hf0.5Zr0.5O2 films is also detected by ellipsometry.
About the authors
S. B. Erenburg
Nikolaev Institute of Inorganic Chemistry, Siberian Branch; Institute of Nuclear Physics, Siberian Branch
Author for correspondence.
Email: simon@niic.nsc.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090
S. V. Trubina
Nikolaev Institute of Inorganic Chemistry, Siberian Branch
Email: simon@niic.nsc.ru
Russian Federation, Novosibirsk, 630090
K. O. Kvashnina
ESRF; HZDR
Email: simon@niic.nsc.ru
France, Grenoble, 38043; Dresden, 01314
V. N. Kruchinin
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: simon@niic.nsc.ru
Russian Federation, Novosibirsk, 630090
V. V. Gritsenko
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University; Novosibirsk State Technical University
Email: simon@niic.nsc.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090; Novosibirsk, 630073
A. G. Chernikova
Moscow Institute of Physics and Technology
Email: simon@niic.nsc.ru
Russian Federation, Dolgoprudnyi, Moscow oblast, 141700
A. M. Markeev
Moscow Institute of Physics and Technology
Email: simon@niic.nsc.ru
Russian Federation, Dolgoprudnyi, Moscow oblast, 141700
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