Investigation of the optimal annealing temperature for the enhanced thermoelectric properties of MOCVD-grown ZnO films

全文:

开放存取 开放存取
受限制的访问 ##reader.subscriptionAccessGranted##
受限制的访问 订阅存取

详细

In this study, we demonstrate the optimization of the annealing temperature for enhanced thermoelectric properties of ZnO. Thin films of ZnO are grown on a sapphire substrate using the metal organic chemical Vapor Deposition (MOCVD) technique. The grown films are annealed in an oxygen environment at 600–1000°C, with a step of 100°C for one hour. Seebeck measurements at room temperature revealed that the Seebeck coefficient of the sample that was not annealed was 152 μV/K, having a carrier concentration of ND ~ 1.46 × 1018 cm–3. The Seebeck coefficient of the annealed films increased from 212 to 415 μV/K up to 900°C and then decreased at 1000°C. The power factor is calculated and found to have an increasing trend with the annealing temperature. This observation is explained by the theory of Johnson and Lark–Horovitz that thermoelectric properties are enhanced by improving the structure of ZnO thin films. The Hall measurements and PL data strongly justify the proposed argument.

作者简介

K. Mahmood

Department of Physics

编辑信件的主要联系方式.
Email: khalid_mahmood856@yahoo.com
巴基斯坦, Faisalabad

A. Ali

Department of Physics

Email: khalid_mahmood856@yahoo.com
巴基斯坦, Faisalabad

M. Arshad

Department of Physics

Email: khalid_mahmood856@yahoo.com
巴基斯坦, Faisalabad

M. Ajaz un Nabi

Department of Physics

Email: khalid_mahmood856@yahoo.com
巴基斯坦, Faisalabad

N. Amin

Department of Physics

Email: khalid_mahmood856@yahoo.com
巴基斯坦, Faisalabad

S. Faraz Murtaza

Department of Physics

Email: khalid_mahmood856@yahoo.com
巴基斯坦, Faisalabad

S. Rabia

Department of Physics

Email: khalid_mahmood856@yahoo.com
巴基斯坦, Bahawalpur

M. Azhar Khan

Department of Physics

Email: khalid_mahmood856@yahoo.com
巴基斯坦, Bahawalpur

补充文件

附件文件
动作
1. JATS XML

版权所有 © Pleiades Publishing, Inc., 2017