Electron–hole liquid in low-dimensional silicon–germanium heterostructures

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Abstract

A brief review is given of the studies in which quasi-two-dimensional spatially-direct and dipolar electron–hole liquids in Si/SiGe/Si type-II heterostructures with a low Ge content in the SiGe layer were discovered and investigated.

About the authors

N. N. Sibeldin

Lebedev Physical Institute

Author for correspondence.
Email: sibeldin@sci.lebedev.ru
Russian Federation, Moscow, 119991

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