Epitaxial Growth of Nonpolar ZnO Films on Sapphire Substrates with a Terrace-Step Nanorelief
- 作者: Muslimov A.1, Ismailov A.2, Babaev V.2, Kanevsky V.1
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隶属关系:
- Shubnikov Institute of Crystallography, Federal Research Center “Crystallography and Photonics,” Russian Academy of Sciences
- Dagestan State University
- 期: 卷 64, 编号 5 (2019)
- 页面: 806-811
- 栏目: Surface and Thin Films
- URL: https://journals.rcsi.science/1063-7745/article/view/194237
- DOI: https://doi.org/10.1134/S1063774519050158
- ID: 194237
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详细
The processes of fabrication of nonpolar (11\(\bar {2}\)0) ZnO films with a thickness of up to 7.25 µm on (1\(\bar {1}\)02) sapphire (Al2O3) substrates with a terrace-step surface nanostructure by magnetron sputtering at a growth rate of up to 4.5 nm/s has been studied. The effect of steps in the initial growth stages has been found, which leads to the formation of isolated ZnO nanostructures decorating the steps. In all next growth stages, a continuous (11\(\bar {2}\)0) epitaxial ZnO film with the longitudinal [0001] axis of crystallites, oriented parallel to the step edge on the sapphire surface has been observed. It is established that the interplanar spacing in the ZnO films in the [11\(\bar {2}\)0] direction, determined from the X-ray diffraction data, depends on the thickness and deposition rate and approaches the value of X-ray diffraction references for ZnO with an increase in thickness to 7.25 µm and a decrease in the growth rate to 2.1–2.3 nm/s.
作者简介
A. Muslimov
Shubnikov Institute of Crystallography, Federal Research Center “Crystallography and Photonics,”Russian Academy of Sciences
编辑信件的主要联系方式.
Email: amuslimov@mail.ru
俄罗斯联邦, Moscow, 117333
A. Ismailov
Dagestan State University
Email: amuslimov@mail.ru
俄罗斯联邦, Makhachkala, 367008
V. Babaev
Dagestan State University
Email: amuslimov@mail.ru
俄罗斯联邦, Makhachkala, 367008
V. Kanevsky
Shubnikov Institute of Crystallography, Federal Research Center “Crystallography and Photonics,”Russian Academy of Sciences
Email: amuslimov@mail.ru
俄罗斯联邦, Moscow, 117333