Defect structure of TiS3 single crystals of the A-ZrSe3 type
- Autores: Bolotina N.B.1, Gorlova I.G.2, Verin I.A.1, Titov A.N.3, Arakcheeva A.V.4
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Afiliações:
- Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics,”
- Kotel’nikov Institute of Radioengineering and Electronics
- Mikheev Institute of Metal Physics, Ural Branch
- Phase Solutions, Co Ltd.
- Edição: Volume 61, Nº 6 (2016)
- Páginas: 923-930
- Seção: Structure of Inorganic Compounds
- URL: https://journals.rcsi.science/1063-7745/article/view/190371
- DOI: https://doi.org/10.1134/S1063774516060055
- ID: 190371
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Resumo
The defect structure of TiS3 single crystals of the A-ZrSe3 type has been determined based on X-ray diffraction data. Shear defects manifest themselves as displacements of ab layers (which can imitate a twin) by ∼0.5a. Regular shears facilitate the formation of a superstructure along the c axis. A model of defect in the layer structure is proposed to explain the atomic displacements at an angle to the layer plane.
Sobre autores
N. Bolotina
Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics,”
Autor responsável pela correspondência
Email: nb_bolotina@mail.ru
Rússia, Moscow, 119333
I. Gorlova
Kotel’nikov Institute of Radioengineering and Electronics
Email: nb_bolotina@mail.ru
Rússia, Moscow, 125009
I. Verin
Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics,”
Email: nb_bolotina@mail.ru
Rússia, Moscow, 119333
A. Titov
Mikheev Institute of Metal Physics, Ural Branch
Email: nb_bolotina@mail.ru
Rússia, Yekaterinburg, 620041
A. Arakcheeva
Phase Solutions, Co Ltd.
Email: nb_bolotina@mail.ru
Suíça, Lausanne, 1012
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