Defect structure of TiS3 single crystals of the A-ZrSe3 type
- Авторы: Bolotina N.B.1, Gorlova I.G.2, Verin I.A.1, Titov A.N.3, Arakcheeva A.V.4
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Учреждения:
- Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics,”
- Kotel’nikov Institute of Radioengineering and Electronics
- Mikheev Institute of Metal Physics, Ural Branch
- Phase Solutions, Co Ltd.
- Выпуск: Том 61, № 6 (2016)
- Страницы: 923-930
- Раздел: Structure of Inorganic Compounds
- URL: https://journals.rcsi.science/1063-7745/article/view/190371
- DOI: https://doi.org/10.1134/S1063774516060055
- ID: 190371
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Аннотация
The defect structure of TiS3 single crystals of the A-ZrSe3 type has been determined based on X-ray diffraction data. Shear defects manifest themselves as displacements of ab layers (which can imitate a twin) by ∼0.5a. Regular shears facilitate the formation of a superstructure along the c axis. A model of defect in the layer structure is proposed to explain the atomic displacements at an angle to the layer plane.
Об авторах
N. Bolotina
Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics,”
Автор, ответственный за переписку.
Email: nb_bolotina@mail.ru
Россия, Moscow, 119333
I. Gorlova
Kotel’nikov Institute of Radioengineering and Electronics
Email: nb_bolotina@mail.ru
Россия, Moscow, 125009
I. Verin
Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics,”
Email: nb_bolotina@mail.ru
Россия, Moscow, 119333
A. Titov
Mikheev Institute of Metal Physics, Ural Branch
Email: nb_bolotina@mail.ru
Россия, Yekaterinburg, 620041
A. Arakcheeva
Phase Solutions, Co Ltd.
Email: nb_bolotina@mail.ru
Швейцария, Lausanne, 1012
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