Enviar artigo por via de e-mail Ga2O3–In2O3 thin films on sapphire substrates: Synthesis and ultraviolet photoconductivity
- Autores: Muslimov A.E.1, Butashin A.V.1, Kolymagin A.B.1, Nabatov B.V.1, Kanevsky V.M.1
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Afiliações:
- Shubnikov Institute of Crystallography, Federal Research Centre “Crystallography and Photonics,”
- Edição: Volume 62, Nº 6 (2017)
- Páginas: 940-946
- Seção: Surface and Thin Films
- URL: https://journals.rcsi.science/1063-7745/article/view/191526
- DOI: https://doi.org/10.1134/S1063774517060177
- ID: 191526
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Resumo
The structure and electrical and optical properties of β-Ga2O3–In2O3 thin films on sapphire substrates with different orientations have been investigated. The samples have been prepared by annealing of gallium–indium metallic films on sapphire substrates in air at different gallium-to-indium ratios in the initial mixture. The photoconductivity of these structures in the solar-blind ultraviolet spectral region has been examined.
Sobre autores
A. Muslimov
Shubnikov Institute of Crystallography, Federal Research Centre “Crystallography and Photonics,”
Autor responsável pela correspondência
Email: amuslimov@mail.ru
Rússia, Moscow, 117333
A. Butashin
Shubnikov Institute of Crystallography, Federal Research Centre “Crystallography and Photonics,”
Email: amuslimov@mail.ru
Rússia, Moscow, 117333
A. Kolymagin
Shubnikov Institute of Crystallography, Federal Research Centre “Crystallography and Photonics,”
Email: amuslimov@mail.ru
Rússia, Moscow, 117333
B. Nabatov
Shubnikov Institute of Crystallography, Federal Research Centre “Crystallography and Photonics,”
Email: amuslimov@mail.ru
Rússia, Moscow, 117333
V. Kanevsky
Shubnikov Institute of Crystallography, Federal Research Centre “Crystallography and Photonics,”
Email: amuslimov@mail.ru
Rússia, Moscow, 117333
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