Ga 2 O 3 –In 2 O 3  thin films on sapphire substrates: Synthesis and ultraviolet photoconductivity

A. E. Muslimov; A. V. Butashin; A. B. Kolymagin; B. V. Nabatov; V. M. Kanevsky

doi:10.1134/S1063774517060177

Ga₂O₃–In₂O₃ thin films on sapphire substrates: Synthesis and ultraviolet photoconductivity

Авторы: Muslimov A.E.¹, Butashin A.V.¹, Kolymagin A.B.¹, Nabatov B.V.¹, Kanevsky V.M.¹
Учреждения:
1. Shubnikov Institute of Crystallography, Federal Research Centre “Crystallography and Photonics,”
Выпуск: Том 62, № 6 (2017)
Страницы: 940-946
Раздел: Surface and Thin Films
URL: https://journals.rcsi.science/1063-7745/article/view/191526
DOI: https://doi.org/10.1134/S1063774517060177
ID: 191526

Цитировать

Полный текст

Открытый доступ
Доступ закрыт

Доступ предоставлен
Доступ закрыт

Только для подписчиков

Аннотация
Об авторах
Список литературы
Дополнительные файлы
Статистика

Аннотация

The structure and electrical and optical properties of β-Ga₂O₃–In₂O₃ thin films on sapphire substrates with different orientations have been investigated. The samples have been prepared by annealing of gallium–indium metallic films on sapphire substrates in air at different gallium-to-indium ratios in the initial mixture. The photoconductivity of these structures in the solar-blind ultraviolet spectral region has been examined.