Ga2O3–In2O3 thin films on sapphire substrates: Synthesis and ultraviolet photoconductivity


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The structure and electrical and optical properties of β-Ga2O3–In2O3 thin films on sapphire substrates with different orientations have been investigated. The samples have been prepared by annealing of gallium–indium metallic films on sapphire substrates in air at different gallium-to-indium ratios in the initial mixture. The photoconductivity of these structures in the solar-blind ultraviolet spectral region has been examined.

作者简介

A. Muslimov

Shubnikov Institute of Crystallography, Federal Research Centre “Crystallography and Photonics,”

编辑信件的主要联系方式.
Email: amuslimov@mail.ru
俄罗斯联邦, Moscow, 117333

A. Butashin

Shubnikov Institute of Crystallography, Federal Research Centre “Crystallography and Photonics,”

Email: amuslimov@mail.ru
俄罗斯联邦, Moscow, 117333

A. Kolymagin

Shubnikov Institute of Crystallography, Federal Research Centre “Crystallography and Photonics,”

Email: amuslimov@mail.ru
俄罗斯联邦, Moscow, 117333

B. Nabatov

Shubnikov Institute of Crystallography, Federal Research Centre “Crystallography and Photonics,”

Email: amuslimov@mail.ru
俄罗斯联邦, Moscow, 117333

V. Kanevsky

Shubnikov Institute of Crystallography, Federal Research Centre “Crystallography and Photonics,”

Email: amuslimov@mail.ru
俄罗斯联邦, Moscow, 117333

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