Influence of arsenic flow on the crystal structure of epitaxial GaAs grown at low temperatures on GaAs (100) and (111)A substrates


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The influence of arsenic flow in a growth chamber on the crystal structure of GaAs grown by molecular-beam epitaxy at a temperature of 240°C on GaAs (100) and (111)A substrates has been investigated. The flow ratio γ of arsenic As4 and gallium was varied in the range from 16 to 50. GaAs films were either undoped, or homogeneously doped with silicon, or contained three equidistantly spaced silicon δ-layers. The structural quality of the annealed samples has been investigated by transmission electron microscopy. It is established for the first time that silicon δ-layers in “low-temperature” GaAs serve as formation centers of arsenic precipitates. Their average size, concentration, and spatial distribution are estimated. The dependence of the film structural quality on γ is analyzed. Regions 100–150 nm in size have been revealed in some samples and identified (by X-ray microanalysis) as pores. It is found that, in the entire range of γ under consideration, GaAs films on (111)A substrates have a poorer structural quality and become polycrystalline beginning with a thickness of 150–200 nm.

Sobre autores

G. Galiev

Institute of Ultra High Frequency Semiconductor Electronics

Email: s_s_e_r_p@mail.ru
Rússia, Moscow, 117105

E. Klimov

Institute of Ultra High Frequency Semiconductor Electronics

Email: s_s_e_r_p@mail.ru
Rússia, Moscow, 117105

A. Vasiliev

Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics,”; National Research Centre “Kurchatov Institute”

Email: s_s_e_r_p@mail.ru
Rússia, Moscow, 119333; Moscow, 123182

R. Imamov

Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics,”

Email: s_s_e_r_p@mail.ru
Rússia, Moscow, 119333

S. Pushkarev

Institute of Ultra High Frequency Semiconductor Electronics

Autor responsável pela correspondência
Email: s_s_e_r_p@mail.ru
Rússia, Moscow, 117105

I. Trunkin

National Research Centre “Kurchatov Institute”

Email: s_s_e_r_p@mail.ru
Rússia, Moscow, 123182

P. Maltsev

Institute of Ultra High Frequency Semiconductor Electronics

Email: s_s_e_r_p@mail.ru
Rússia, Moscow, 117105

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