Conditions for Obtaining High-Quality Crystals by the Czochralski Method
- Авторлар: Matrosov V.1
-
Мекемелер:
- Belarusian National Technical University
- Шығарылым: Том 64, № 1 (2019)
- Беттер: 174-176
- Бөлім: Crystal Growth
- URL: https://journals.rcsi.science/1063-7745/article/view/193721
- DOI: https://doi.org/10.1134/S1063774519010188
- ID: 193721
Дәйексөз келтіру
Аннотация
The effect of two control contours on the shape of crystal‒melt interface has been examined. It is shown that the shape of crystal‒melt interface can be flexibly and efficiently governed using these contours with large and small time constants. The dependences of the shape of crystal‒melt interface on the fluctuations of cooling water temperature, growth room temperature, and input voltage have been established. The investigations made it possible to improve significantly the growth process parameters and obtain high-quality crystals.
Авторлар туралы
V. Matrosov
Belarusian National Technical University
Хат алмасуға жауапты Автор.
Email: matrosov@solix-crystal.com
Белоруссия, Minsk, 220107