Conditions for Obtaining High-Quality Crystals by the Czochralski Method
- Authors: Matrosov V.N.1
-
Affiliations:
- Belarusian National Technical University
- Issue: Vol 64, No 1 (2019)
- Pages: 174-176
- Section: Crystal Growth
- URL: https://journals.rcsi.science/1063-7745/article/view/193721
- DOI: https://doi.org/10.1134/S1063774519010188
- ID: 193721
Cite item
Abstract
The effect of two control contours on the shape of crystal‒melt interface has been examined. It is shown that the shape of crystal‒melt interface can be flexibly and efficiently governed using these contours with large and small time constants. The dependences of the shape of crystal‒melt interface on the fluctuations of cooling water temperature, growth room temperature, and input voltage have been established. The investigations made it possible to improve significantly the growth process parameters and obtain high-quality crystals.
About the authors
V. N. Matrosov
Belarusian National Technical University
Author for correspondence.
Email: matrosov@solix-crystal.com
Belarus, Minsk, 220107