Ga 2 O 3 –In 2 O 3  thin films on sapphire substrates: Synthesis and ultraviolet photoconductivity

A. E. Muslimov; A. V. Butashin; A. B. Kolymagin; B. V. Nabatov; V. M. Kanevsky

doi:10.1134/S1063774517060177

Ga₂O₃–In₂O₃ thin films on sapphire substrates: Synthesis and ultraviolet photoconductivity

Authors: Muslimov A.E.¹, Butashin A.V.¹, Kolymagin A.B.¹, Nabatov B.V.¹, Kanevsky V.M.¹
Affiliations:
1. Shubnikov Institute of Crystallography, Federal Research Centre “Crystallography and Photonics,”
Issue: Vol 62, No 6 (2017)
Pages: 940-946
Section: Surface and Thin Films
URL: https://journals.rcsi.science/1063-7745/article/view/191526
DOI: https://doi.org/10.1134/S1063774517060177
ID: 191526

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Abstract

The structure and electrical and optical properties of β-Ga₂O₃–In₂O₃ thin films on sapphire substrates with different orientations have been investigated. The samples have been prepared by annealing of gallium–indium metallic films on sapphire substrates in air at different gallium-to-indium ratios in the initial mixture. The photoconductivity of these structures in the solar-blind ultraviolet spectral region has been examined.