Email this article Structure of Diamond-Like Silicon–Carbon Films Alloyed by Vanadium
- Authors: Zhigalina O.M.1,2, Khmelenin D.N.1, Pimenov S.M.3, Shupegin M.L.4,5, Dyachkova I.G.1,5, Asadchikov V.E.1
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Affiliations:
- Shubnikov Institute of Crystallography, Federal Research Centre “Crystallography u Photonics,”
- Bauman Moscow State Technical University
- Prokhorov General Physics Institute of the Russian Academy of Sciences
- National Research University “Moscow Power Engineering Institute,”
- Research Institute of Advanced Materials and Technologies
- Issue: Vol 63, No 5 (2018)
- Pages: 796-801
- Section: Surface and Thin Films
- URL: https://journals.rcsi.science/1063-7745/article/view/192981
- DOI: https://doi.org/10.1134/S1063774518050334
- ID: 192981
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Abstract
The structure of diamond-like silicon–carbon films formed on silicon substrates by magnetron and plasmatron codeposition using a closed-field magnetron and a plasmatron activated by tungsten cathode has been studied by transmission electron microscopy. The main feature of the films alloyed by vanadium to concentrations of 12–31 at % was found to be a layered structure of the film cross section. It was established that vanadium alloying leads to the formation of vanadium carbide (VC) nanocrystals; the nanocrystal size increases from 1–2 to 10 nm. At the maximum vanadium content, VC nanocrystals have an anisotropic shape: they are extended in the direction perpendicular to the film–substrate interface.
About the authors
O. M. Zhigalina
Shubnikov Institute of Crystallography, Federal Research Centre “Crystallography u Photonics,”; Bauman Moscow State Technical University
Author for correspondence.
Email: zhigal@crys.ras.ru
Russian Federation, Moscow, 119333; Moscow, 105005
D. N. Khmelenin
Shubnikov Institute of Crystallography, Federal Research Centre “Crystallography u Photonics,”
Email: zhigal@crys.ras.ru
Russian Federation, Moscow, 119333
S. M. Pimenov
Prokhorov General Physics Institute of the Russian Academy of Sciences
Email: zhigal@crys.ras.ru
Russian Federation, Moscow, 119991
M. L. Shupegin
National Research University “Moscow Power Engineering Institute,”; Research Institute of Advanced Materials and Technologies
Email: zhigal@crys.ras.ru
Russian Federation, Moscow, 111250; Moscow, 115054
I. G. Dyachkova
Shubnikov Institute of Crystallography, Federal Research Centre “Crystallography u Photonics,”; Research Institute of Advanced Materials and Technologies
Email: zhigal@crys.ras.ru
Russian Federation, Moscow, 119333; Moscow, 115054
V. E. Asadchikov
Shubnikov Institute of Crystallography, Federal Research Centre “Crystallography u Photonics,”
Email: zhigal@crys.ras.ru
Russian Federation, Moscow, 119333
