Bromination of 1,2,3,4-Tetrahydro-1,10-phenanthroline: Synthesis and Crystal Structure of 6-Bromo-1,2,3,4-tetrahydro-1,10-phenanthroline and Its Bromide Salt
- Authors: Su H.P.1, Yi H.P.1, Xiaofeng J.S.1, Song B.H.1, Chen S.P.1
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Affiliations:
- College of Materials Science and Engineering
- Issue: Vol 62, No 7 (2017)
- Pages: 1099-1103
- Section: Structure of Organic Compounds
- URL: https://journals.rcsi.science/1063-7745/article/view/191752
- DOI: https://doi.org/10.1134/S1063774517070252
- ID: 191752
Cite item
Abstract
The bromination reaction of 1,2,3,4-tetrahydro-1,10-phenanthroline (tphen) is investigated, which can afford a new heterocyclic compound, namely 6-bromo-1,2,3,4-tetrahydro-1,10-phenanthroline (1). The bromide salt of 1, i.e., 1 · (1H) · Br (2), can be isolated from the bromination system. The accurate structures of both compounds are confirmed and investigated by single-crystal X-ray diffraction. The result proves that the bromination reaction of tphen mainly affords its C6-substituted product. In compounds 1 and 2, the N−H···Br hydrogen bonds play an important role in intermolecular connection. Crystal data of 1: Monoclinic system, sp. gr. Pc, a = 4.6628(8) Å, b = 8.7980(15) Å, c = 13.1347(19) Å, β = 101.342(5)°, Z = 2, V = 528.31(15) Å3. Crystal data of 2: Monoclinic system, sp. gr. P21/n, a = 16.6171(16) Å, b = 7.8323(8) Å, c = 18.6972(18) Å, β = 113.597(2)°, Z = 4, V = 2230.0(4) Å3.
About the authors
H. P. Su
College of Materials Science and Engineering
Email: chenshuoping_777@163.com
China, Guilin, 541004 P. R.
H. P. Yi
College of Materials Science and Engineering
Email: chenshuoping_777@163.com
China, Guilin, 541004 P. R.
J. S. Xiaofeng
College of Materials Science and Engineering
Email: chenshuoping_777@163.com
China, Guilin, 541004 P. R.
B. H. Song
College of Materials Science and Engineering
Email: chenshuoping_777@163.com
China, Guilin, 541004 P. R.
S. P. Chen
College of Materials Science and Engineering
Author for correspondence.
Email: chenshuoping_777@163.com
China, Guilin, 541004 P. R.
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