Influence of impurity atmosphere on the deformation of silicon crystals
- Authors: Klyuchnik P.A.1, Petukhov B.V.1
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Affiliations:
- Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics”
- Issue: Vol 62, No 4 (2017)
- Pages: 622-628
- Section: Physical Properties of Crystals
- URL: https://journals.rcsi.science/1063-7745/article/view/191209
- DOI: https://doi.org/10.1134/S1063774517040101
- ID: 191209
Cite item
Abstract
The Alexander–Haasen theory, which describes the deformation kinetics of silicon crystals, has been generalized for impurity crystals. The deformation kinetics of an impurity sample is calculated in a wide range of parameters, including the cases of partial and complete entrainment of impurities by moving dislocations. The developed model, despite its simplicity, adequately describes the qualitative transformation of the stress–strain curves of impurity silicon crystals in dependence of the impurity concentration and other material parameters. The manifestation of negative velocity dependence of the yield stress, observed in natural experiments, is analyzed.
About the authors
P. A. Klyuchnik
Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics”
Author for correspondence.
Email: fandosmail@gmail.com
Russian Federation, Moscow, 119333
B. V. Petukhov
Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics”
Email: fandosmail@gmail.com
Russian Federation, Moscow, 119333