Email this article The possibility of identifying the spatial location of single dislocations by topo-tomography on laboratory setups
- Authors: Zolotov D.A.1, Buzmakov A.V.1, Elfimov D.A.1,2, Asadchikov V.E.1,2, Chukhovskii F.N.1
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Affiliations:
- Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics,”
- Moscow State University
- Issue: Vol 62, No 1 (2017)
- Pages: 20-24
- Section: Diffraction and Scattering of Ionizing Radiations
- URL: https://journals.rcsi.science/1063-7745/article/view/190568
- DOI: https://doi.org/10.1134/S1063774517010266
- ID: 190568
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Abstract
The spatial arrangement of single linear defects in a Si single crystal (input surface {111}) has been investigated by X-ray topo-tomography using laboratory X-ray sources. The experimental technique and the procedure of reconstructing a 3D image of dislocation half-loops near the Si crystal surface are described. The sizes of observed linear defects with a spatial resolution of about 10 μm are estimated.
About the authors
D. A. Zolotov
Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics,”
Author for correspondence.
Email: zolotovden@crys.ras.ru
Russian Federation, Moscow, 119333
A. V. Buzmakov
Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics,”
Email: zolotovden@crys.ras.ru
Russian Federation, Moscow, 119333
D. A. Elfimov
Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics,”; Moscow State University
Email: zolotovden@crys.ras.ru
Russian Federation, Moscow, 119333; Moscow, 119991
V. E. Asadchikov
Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics,”; Moscow State University
Email: zolotovden@crys.ras.ru
Russian Federation, Moscow, 119333; Moscow, 119991
F. N. Chukhovskii
Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics,”
Email: zolotovden@crys.ras.ru
Russian Federation, Moscow, 119333
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