Electron microscopy study of the microstructure of Ni–W substrate surface
- Authors: Ovcharov A.V.1, Karateev I.A.1, Mikhutkin A.A.1, Orekhov A.S.2, Presniakov M.Y.1, Chernykh I.A.1, Zanaveskin M.L.1, Kovalchuk M.V.1,2, Vasiliev A.L.1,2
- 
							Affiliations: 
							- National Research Centre “Kurchatov Institute,”
- Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics,”
 
- Issue: Vol 61, No 6 (2016)
- Pages: 1002-1007
- Section: Surface and Thin Films
- URL: https://journals.rcsi.science/1063-7745/article/view/190421
- DOI: https://doi.org/10.1134/S1063774516060109
- ID: 190421
Cite item
Abstract
The surface microstructure of Ni–W alloy tapes, which are used as substrates to form films of high-temperature superconductors and photovoltaic devices, has been studied. Several samples of a Ni95W5 tape (Evico) annealed under different conditions were analyzed using scanning electron microscopy, energy-dispersive X-ray microanalysis, electron diffraction, and electron energy-loss spectroscopy. NiWO4 precipitates are found on the surface of annealed samples. The growth of precipitates at a temperature of 950°С is accompanied by the formation of pores on the surface or under an oxide film. Depressions with a wedge-shaped profile are found at the grain boundaries. Annealing in a reducing atmosphere using a specially prepared chamber allows one to form a surface free of nickel tungstate precipitates.
About the authors
A. V. Ovcharov
National Research Centre “Kurchatov Institute,”
														Email: a.vasiliev56@gmail.com
				                					                																			                												                	Russian Federation, 							Moscow, 123182						
I. A. Karateev
National Research Centre “Kurchatov Institute,”
														Email: a.vasiliev56@gmail.com
				                					                																			                												                	Russian Federation, 							Moscow, 123182						
A. A. Mikhutkin
National Research Centre “Kurchatov Institute,”
														Email: a.vasiliev56@gmail.com
				                					                																			                												                	Russian Federation, 							Moscow, 123182						
A. S. Orekhov
Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics,”
														Email: a.vasiliev56@gmail.com
				                					                																			                												                	Russian Federation, 							Moscow, 119333						
M. Yu. Presniakov
National Research Centre “Kurchatov Institute,”
														Email: a.vasiliev56@gmail.com
				                					                																			                												                	Russian Federation, 							Moscow, 123182						
I. A. Chernykh
National Research Centre “Kurchatov Institute,”
														Email: a.vasiliev56@gmail.com
				                					                																			                												                	Russian Federation, 							Moscow, 123182						
M. L. Zanaveskin
National Research Centre “Kurchatov Institute,”
														Email: a.vasiliev56@gmail.com
				                					                																			                												                	Russian Federation, 							Moscow, 123182						
M. V. Kovalchuk
National Research Centre “Kurchatov Institute,”; Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics,”
														Email: a.vasiliev56@gmail.com
				                					                																			                												                	Russian Federation, 							Moscow, 123182; Moscow, 119333						
A. L. Vasiliev
National Research Centre “Kurchatov Institute,”; Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics,”
							Author for correspondence.
							Email: a.vasiliev56@gmail.com
				                					                																			                												                	Russian Federation, 							Moscow, 123182; Moscow, 119333						
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