Surface Acoustic Wave Characteristics with a Layered Structure of IDT/θ° YX-LiTaO3/SiO2/AlN/diamond


Дәйексөз келтіру

Толық мәтін

Ашық рұқсат Ашық рұқсат
Рұқсат жабық Рұқсат берілді
Рұқсат жабық Тек жазылушылар үшін

Аннотация

A new layered surface acoustic wave (SAW) structure was proposed by Murata Co., Ltd recently. It was reported that such structure could achieve an incredible high performance including a higher quality factor Q and electromechanical coupling coefficient K2. For deeply understanding propagating characteristics and optimizing the performance of the SAWs in such structure, a layered structure of IDT/θ° YX-LiTaO3/SiO2/AlN/Diamond with different structural parameters were theoretically investigated by FEM method. The calculated admittance shows that four eigenmodes simultaneously exist in such layered structure including the main mode SH SAW. And compared with the Traditional SAW structure, the main mode could achieve a higher value of K2 with sacrificing its velocity a little. Different metal layers (Au, Al, and Cu) were examined as the electrode material. With Au employed, the K2 of the main mode is a little larger resulting from better suppression of the spurious modes. The optimum thickness of electrode and piezoelectric layer are 0.2 and 0.02λ, respectively. In this case, the K2 for the SH SAW achieves its maximum value of 12.20% with a large phase velocity of 3608 m/s. Furthermore, the pure SH SAW can be obtained with the Y-cut Euler angle θ from 0° to 60°, where its K2 has a wide range of 8.70 to 13.69%. Consequently, the work provides a theoretical guide for designing SAW devices of different bandwidth and operation frequency with such structure.

Авторлар туралы

Q. Xiao

School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University

Email: jxj127@sjtu.edu.cn
ҚХР, Shanghai, 200240

M. Dai

No. 704 Research Institute, China Shipbuilding Industry Corporation

Email: jxj127@sjtu.edu.cn
ҚХР, Shanghai, 200031

J. Chen

School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University

Email: jxj127@sjtu.edu.cn
ҚХР, Shanghai, 200240

Y. Fan

School of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology

Email: jxj127@sjtu.edu.cn
ҚХР, Shanghai, 200093

P. Cai

School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University

Email: jxj127@sjtu.edu.cn
ҚХР, Shanghai, 200240

X. Ji

School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University

Хат алмасуға жауапты Автор.
Email: jxj127@sjtu.edu.cn
ҚХР, Shanghai, 200240

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