Direct conversion of β-decay energy into electrical energy


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A comparison of the efficiencies of the power supplies produced based on the β-radiation sources has been carried out. The factors decreasing the efficiency of the device have been revealed. The results of the experimental studies and calculations of the efficiency of the direct energy conversion of Ni-63 β-radiation into electrical energy using silicon p–i–n diodes are presented. An expression for the open-circuit voltage of the convertor taking into account the distribution of high-energy electrons in the space charge region (SCR) of the p–i–n diode has been obtained. The ways of optimizing the convertor’s parameters due to improvements in the diode production technology and optimization of the thicknesses of the active emitter layer and i-region of the semiconductor convertor have been indicated.

作者简介

S. Bulyarskii

Institute of Nanotechnologies of Microelectronics

编辑信件的主要联系方式.
Email: bulyar2954@mail.ru
俄罗斯联邦, Moscow, 119991

A. Lakalin

Institute of Nanotechnologies of Microelectronics

Email: bulyar2954@mail.ru
俄罗斯联邦, Moscow, 119991

I. Abanin

Scientific-Manufacturing Complex Technological Center MIET

Email: bulyar2954@mail.ru
俄罗斯联邦, Zelenograd, Moscow, 124498

V. Amelichev

Scientific-Manufacturing Complex Technological Center MIET

Email: bulyar2954@mail.ru
俄罗斯联邦, Zelenograd, Moscow, 124498

V. Risovanyi

JSC Science and Innovations

Email: bulyar2954@mail.ru
俄罗斯联邦, Moscow, 119017

V. Svetukhin

Ulyanovsk State University

Email: bulyar2954@mail.ru
俄罗斯联邦, Ulyanovsk, 432017

B. Ivanov

High-Technological Scientific-Research Institute of Inorganic Materials

Email: bulyar2954@mail.ru
俄罗斯联邦, Moscow, 123098

I. Lisina

High-Technological Scientific-Research Institute of Inorganic Materials

Email: bulyar2954@mail.ru
俄罗斯联邦, Moscow, 123098

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