Efficiency of frequency transformation on MOS transistors with a built-in channel under intensively handicapped radioreception
- 作者: Zhuravlev D.1, Mushta A.1
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隶属关系:
- Voronezh State Technical University
- 期: 卷 45, 编号 7 (2016)
- 页面: 478-483
- 栏目: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/185895
- DOI: https://doi.org/10.1134/S1063739716070180
- ID: 185895
如何引用文章
详细
An algorithm and a technique are developed for finding the maximum values of the target current components in a MOS transistor with an n-type built-in channel depending on the submicron and nanoscale topological norms for a frequency transformer in the presence of intensive noise at its input. The spectral making components of the intermediate frequency are evaluated and analyzed for the given amplitudes of the generator, signal, and handicap. The behavior of the n-MOS transistors designed according to the GPDK045 and GPDK0990 technological norms is investigated.
作者简介
D. Zhuravlev
Voronezh State Technical University
编辑信件的主要联系方式.
Email: ddom1@yandex.ru
俄罗斯联邦, Voronezh, 394000
A. Mushta
Voronezh State Technical University
Email: ddom1@yandex.ru
俄罗斯联邦, Voronezh, 394000