Effect of the Distribution of the Radiation Defect on the Field-Emission Properties of Silicon Crystals
- Авторы: Yafarov R.1, Timoshenkov V.2
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Учреждения:
- Kotel’nikov Institute of Radio Engineering and Electronics
- National Research University of Electronic Technology (MIET)
- Выпуск: Том 47, № 4 (2018)
- Страницы: 251-258
- Раздел: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/186865
- DOI: https://doi.org/10.1134/S106373971804008X
- ID: 186865
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Аннотация
The correlated regularities of the variations in the structural and phase composition and morphological and field-emission characteristics of the surface-structured р- and n-Si crystals upon stepwise highdose ion-beam carbon processing are studied. It is shown that the stepwise high-dose ion implantation of carbon atoms into the surface of silicon wafers structured using nonlithographic carbon mask coatings makes it possible to reduce field-emission thresholds and increase the densities of the maximum field-emission currents by more than two orders of magnitude relative to the values for emitter arrays fabricated using traditional microelectronic technologies. The physicochemical mechanisms responsible for modifying the surface properties of silicon structures upon carbon ion implantation are discussed.
Об авторах
R. Yafarov
Kotel’nikov Institute of Radio Engineering and Electronics
Автор, ответственный за переписку.
Email: pirpc@yandex.ru
Россия, Saratov, 410019
V. Timoshenkov
National Research University of Electronic Technology (MIET)
Email: pirpc@yandex.ru
Россия, Zelenograd, 124498