Effect of the Measuring Signal Parameters on the Error in Capacitance Measurements of a p-n Transition and Determining Its Resistance to Radiation

Аннотация

The effect of the measuring signal parameters on the capacitance measurement error of semiconductor diodes is estimated: the form of the distribution function of the results of the measurements and its repeatability and statistical parameters (mean and standard deviation). Methods to reduce the measurement errors are proposed. The parameters of the measuring signal for which the root-mean-square deviation within the sample of the obtained results is minimal are determined. It is shown that the measurement results can have a statistical distribution law different from the Gaussian law. The influence of the measurement error on the recovery of a charge carrier’s distribution is demonstrated. A criterion for determining the level of radiation resistance based on a change in the concentration of charge carriers under the action of a fast neutron flux is proposed.