Отправить статью по E-mail The circuit and functional blocks for radiation-hard transceiver LSICs in SOI CMOS
- Авторы: Nazarova G.N.1,2, Elesin V.V.1,2, Nikiforov A.Y.1,2, Kuznetsov A.G.1,2, Usachev N.A.1,2, Amburkin D.M.1,2
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Учреждения:
- National Research Nuclear University MEPhI (Moscow Engineering Physics Institute)
- JSC Experimental Research and Production Association of Specialized Electronic Systems (JSC ENPO SPELS)
- Выпуск: Том 45, № 1 (2016)
- Страницы: 68-76
- Раздел: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/185541
- DOI: https://doi.org/10.1134/S106373971601008X
- ID: 185541
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Аннотация
The results of designing a set of basic circuit and functional blocks (amplifying, oscillating, mixing, etc.) to construct the radiation-hard transceiver CMOS Silicon-on-Insulator (SOI) large-scale integration circuits (LSICs) are presented. It was established experimentally that the test chips of the circuit and functional blocks (CFBs) produced by domestic CMOS SOI technologies at a feature size of 0.35 µm are functionally operable in the frequency range of 1 MHz to 1.8 GHz, and the values of the main parameters are close to the calculated ones. The results of the experimental research on the hardness of the developed CFBs to pulse and dose impact of ionizing radiation are presented and the hardness levels were evaluated.
Об авторах
G. Nazarova
National Research Nuclear University MEPhI (Moscow Engineering Physics Institute); JSC Experimental Research and Production Association of Specialized Electronic Systems (JSC ENPO SPELS)
Автор, ответственный за переписку.
Email: gnnaz@spels.ru
Россия, Kashirskoe sh. 31, Moscow, 115409; Kashirskoye sh. 31, Moscow, 115409
V. Elesin
National Research Nuclear University MEPhI (Moscow Engineering Physics Institute); JSC Experimental Research and Production Association of Specialized Electronic Systems (JSC ENPO SPELS)
Email: gnnaz@spels.ru
Россия, Kashirskoe sh. 31, Moscow, 115409; Kashirskoye sh. 31, Moscow, 115409
A. Nikiforov
National Research Nuclear University MEPhI (Moscow Engineering Physics Institute); JSC Experimental Research and Production Association of Specialized Electronic Systems (JSC ENPO SPELS)
Email: gnnaz@spels.ru
Россия, Kashirskoe sh. 31, Moscow, 115409; Kashirskoye sh. 31, Moscow, 115409
A. Kuznetsov
National Research Nuclear University MEPhI (Moscow Engineering Physics Institute); JSC Experimental Research and Production Association of Specialized Electronic Systems (JSC ENPO SPELS)
Email: gnnaz@spels.ru
Россия, Kashirskoe sh. 31, Moscow, 115409; Kashirskoye sh. 31, Moscow, 115409
N. Usachev
National Research Nuclear University MEPhI (Moscow Engineering Physics Institute); JSC Experimental Research and Production Association of Specialized Electronic Systems (JSC ENPO SPELS)
Email: gnnaz@spels.ru
Россия, Kashirskoe sh. 31, Moscow, 115409; Kashirskoye sh. 31, Moscow, 115409
D. Amburkin
National Research Nuclear University MEPhI (Moscow Engineering Physics Institute); JSC Experimental Research and Production Association of Specialized Electronic Systems (JSC ENPO SPELS)
Email: gnnaz@spels.ru
Россия, Kashirskoe sh. 31, Moscow, 115409; Kashirskoye sh. 31, Moscow, 115409
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