Мақаланы E-mail арқылы жіберу Influence of the yttria dopant on the structure and properties of (ZrO2)0.91–x(Sc2O3)0.09(Y2O3)х (x = 0–0.02) crystals
- Авторлар: Agarkov D.1, Seryakov S.2,3, Myzina V.1, Milovich F.2, Lomonova E.1, Kuritsyna I.1, Kulebyakin A.2, Iskhakova L.2,4, Bublik V.3, Bredikhin S.1, Borik M.2, Tabachkova N.2
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Мекемелер:
- Institute of Solid State Physics
- Prokhorov Institute of General Physics
- National Research University of Science and Technology MISIS
- Research Center of Fiber Optics
- Шығарылым: Том 45, № 8-9 (2016)
- Беттер: 625-632
- Бөлім: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/186161
- DOI: https://doi.org/10.1134/S1063739716080023
- ID: 186161
Дәйексөз келтіру
Ашық рұқсат
Рұқсат берілді
Тек жазылушылар үшін
Аннотация
We have studied the influence of the yttrium oxide (Y2O3) dopant (1 and 2 mol %) on the phase composition, structure, and electrical properties of ZrO2–9 mol % Sc2O3 solid solution. Stabilization of ZrO2 jointly with 9 mol % Sc2O3 and 2 mol % Y2O3 is shown to allow the acquisition of high phase stability transparent homogeneous crystals with a cubic structure. Their mechanical grinding is established to cause no change in the phase composition of these crystals, whereas the powders retain the initial fluorine structure. The powders preserved the original structure of the fluorite crystals. All the probed crystals reveal high microhardness and low fracture toughness. Increasing the Y2O3 concentration in the crystals led to a reduction of the maximum loads on the indenter, which the sample withstood without cracking. As is shown, the specific conductivity exhibits nonmonotonic behavior depending on the Y2O3 concentration in the crystals. Increasing the Y2O3 content to 2 mol % in the solid electrolyte reduces the conductivity of the crystals in the entire temperature range that is attributed to a decrease in the carrier mobility due to the increasing ion radius of the stabilizing ion.
Негізгі сөздер
Авторлар туралы
D. Agarkov
Institute of Solid State Physics
Email: ntabachkova@gmail.com
Ресей, ul. Akademika Osip’yana 2, Chernogolovka, Moscow oblast, 142432
S. Seryakov
Prokhorov Institute of General Physics; National Research University of Science and Technology MISIS
Email: ntabachkova@gmail.com
Ресей, ul. Vavilova 38, Moscow, 119991; Leninskii pr. 4, Moscow, 119049
V. Myzina
Institute of Solid State Physics
Email: ntabachkova@gmail.com
Ресей, ul. Akademika Osip’yana 2, Chernogolovka, Moscow oblast, 142432
F. Milovich
Prokhorov Institute of General Physics
Email: ntabachkova@gmail.com
Ресей, ul. Vavilova 38, Moscow, 119991
E. Lomonova
Institute of Solid State Physics
Email: ntabachkova@gmail.com
Ресей, ul. Akademika Osip’yana 2, Chernogolovka, Moscow oblast, 142432
I. Kuritsyna
Institute of Solid State Physics
Email: ntabachkova@gmail.com
Ресей, ul. Akademika Osip’yana 2, Chernogolovka, Moscow oblast, 142432
A. Kulebyakin
Prokhorov Institute of General Physics
Email: ntabachkova@gmail.com
Ресей, ul. Vavilova 38, Moscow, 119991
L. Iskhakova
Prokhorov Institute of General Physics; Research Center of Fiber Optics
Email: ntabachkova@gmail.com
Ресей, ul. Vavilova 38, Moscow, 119991; ul. Vavilova 38, Moscow, 119991
V. Bublik
National Research University of Science and Technology MISIS
Email: ntabachkova@gmail.com
Ресей, Leninskii pr. 4, Moscow, 119049
S. Bredikhin
Institute of Solid State Physics
Email: ntabachkova@gmail.com
Ресей, ul. Akademika Osip’yana 2, Chernogolovka, Moscow oblast, 142432
M. Borik
Prokhorov Institute of General Physics
Email: ntabachkova@gmail.com
Ресей, ul. Vavilova 38, Moscow, 119991
N. Tabachkova
Prokhorov Institute of General Physics
Хат алмасуға жауапты Автор.
Email: ntabachkova@gmail.com
Ресей, ul. Vavilova 38, Moscow, 119991
