Polished surface roughness of optoelectronic components made of monocrystalline materials


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A study of the mechanism of formation of monocrystal planes of different crystallographic orientations has revealed that in polishing of sapphire the surface roughness parameters Ra, Rq, Rmax decrease in the series c > r > m > a with decreasing dielectric permittivity and thermal conductivity coefficient of the workpiece material, debris particle height, and Lifshitz constant that represents the energy of interaction between the polishing powder grains and the workpiece surface. The minimum allowable values of surface roughness parameters for atomically smooth surfaces have been defined, which linearly depend on interplanar spacings and decrease in the series r > a > c > m.

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O. Filatov

Bakul Institute for Superhard Materials

编辑信件的主要联系方式.
Email: filatov@ism.kiev.ua
乌克兰, vul. Avtozavods’ka 2, Kiev

V. Sidorko

Bakul Institute for Superhard Materials

Email: filatov@ism.kiev.ua
乌克兰, vul. Avtozavods’ka 2, Kiev

S. Kovalev

Bakul Institute for Superhard Materials

Email: filatov@ism.kiev.ua
乌克兰, vul. Avtozavods’ka 2, Kiev

Yu. Filatov

Bakul Institute for Superhard Materials

Email: filatov@ism.kiev.ua
乌克兰, vul. Avtozavods’ka 2, Kiev

A. Vetrov

Bakul Institute for Superhard Materials

Email: filatov@ism.kiev.ua
乌克兰, vul. Avtozavods’ka 2, Kiev

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