Email this article Studying the Elastic Stresses at the Edges of a Section of the SOI Heterostructure of a Micro-Electromechanical Pressure Transducer with an Isolated Tensoframe
- Authors: Sokolov L.V.1
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Affiliations:
- AO Ramenskoye Instrument Engineering Bureau
- Issue: Vol 83, No 11 (2019)
- Pages: 1345-1348
- Section: Article
- URL: https://journals.rcsi.science/1062-8738/article/view/187570
- DOI: https://doi.org/10.3103/S1062873819110248
- ID: 187570
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Abstract
The elastic stresses on the edges of a section of a micromechanical silicon tensoframe–glassy dielectric layer–silicon membrane structure are investigated, along with the topology of a local area on the surface of the transitional layer of a chip for a micro-electromechanical (MEMS) pressure transducer with an isolated 3D tensoframe.
About the authors
L. V. Sokolov
AO Ramenskoye Instrument Engineering Bureau
Author for correspondence.
Email: sokolov@niiao.ru
Russian Federation, Ramenskoe, 140103
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