电邮这篇文章 Developing and Manufacturing a Molecular Single-Electron Transistor with Isolated Side Gates
- 作者: Morozova E.K.1, Gaidamachenko V.R.1, Daghesyan S.A.1,2, Soldatov E.S.1,2, Beloglazkina E.K.1
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隶属关系:
- Faculty of Physics, Moscow State University
- Center for Quantum Technologies, Moscow State University
- 期: 卷 83, 编号 1 (2019)
- 页面: 1-5
- 栏目: Article
- URL: https://journals.rcsi.science/1062-8738/article/view/187084
- DOI: https://doi.org/10.3103/S1062873819010179
- ID: 187084
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详细
A version of a molecular nanotransistor with improved efficiency and reliable isolation of side gates is developed and tested. The correlated nature of electronic transport in the transistor and high resistance of the isolation of the gates (more than 1 TΩ) ensure the correct mode of measuring the transistor control characteristics.
作者简介
E. Morozova
Faculty of Physics, Moscow State University
Email: esold@phys.msu.ru
俄罗斯联邦, Moscow, 119991
V. Gaidamachenko
Faculty of Physics, Moscow State University
Email: esold@phys.msu.ru
俄罗斯联邦, Moscow, 119991
S. Daghesyan
Faculty of Physics, Moscow State University; Center for Quantum Technologies, Moscow State University
Email: esold@phys.msu.ru
俄罗斯联邦, Moscow, 119991; Moscow, 119991
E. Soldatov
Faculty of Physics, Moscow State University; Center for Quantum Technologies, Moscow State University
编辑信件的主要联系方式.
Email: esold@phys.msu.ru
俄罗斯联邦, Moscow, 119991; Moscow, 119991
E. Beloglazkina
Faculty of Physics, Moscow State University
Email: esold@phys.msu.ru
俄罗斯联邦, Moscow, 119991
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