Enviar artigo por via de e-mail Developing and Manufacturing a Molecular Single-Electron Transistor with Isolated Side Gates
- Autores: Morozova E.K.1, Gaidamachenko V.R.1, Daghesyan S.A.1,2, Soldatov E.S.1,2, Beloglazkina E.K.1
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Afiliações:
- Faculty of Physics, Moscow State University
- Center for Quantum Technologies, Moscow State University
- Edição: Volume 83, Nº 1 (2019)
- Páginas: 1-5
- Seção: Article
- URL: https://journals.rcsi.science/1062-8738/article/view/187084
- DOI: https://doi.org/10.3103/S1062873819010179
- ID: 187084
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Resumo
A version of a molecular nanotransistor with improved efficiency and reliable isolation of side gates is developed and tested. The correlated nature of electronic transport in the transistor and high resistance of the isolation of the gates (more than 1 TΩ) ensure the correct mode of measuring the transistor control characteristics.
Sobre autores
E. Morozova
Faculty of Physics, Moscow State University
Email: esold@phys.msu.ru
Rússia, Moscow, 119991
V. Gaidamachenko
Faculty of Physics, Moscow State University
Email: esold@phys.msu.ru
Rússia, Moscow, 119991
S. Daghesyan
Faculty of Physics, Moscow State University; Center for Quantum Technologies, Moscow State University
Email: esold@phys.msu.ru
Rússia, Moscow, 119991; Moscow, 119991
E. Soldatov
Faculty of Physics, Moscow State University; Center for Quantum Technologies, Moscow State University
Autor responsável pela correspondência
Email: esold@phys.msu.ru
Rússia, Moscow, 119991; Moscow, 119991
E. Beloglazkina
Faculty of Physics, Moscow State University
Email: esold@phys.msu.ru
Rússia, Moscow, 119991
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