Email this article Developing and Manufacturing a Molecular Single-Electron Transistor with Isolated Side Gates
- Authors: Morozova E.K.1, Gaidamachenko V.R.1, Daghesyan S.A.1,2, Soldatov E.S.1,2, Beloglazkina E.K.1
-
Affiliations:
- Faculty of Physics, Moscow State University
- Center for Quantum Technologies, Moscow State University
- Issue: Vol 83, No 1 (2019)
- Pages: 1-5
- Section: Article
- URL: https://journals.rcsi.science/1062-8738/article/view/187084
- DOI: https://doi.org/10.3103/S1062873819010179
- ID: 187084
Cite item
Open Access
Access granted
Subscription Access
Abstract
A version of a molecular nanotransistor with improved efficiency and reliable isolation of side gates is developed and tested. The correlated nature of electronic transport in the transistor and high resistance of the isolation of the gates (more than 1 TΩ) ensure the correct mode of measuring the transistor control characteristics.
About the authors
E. K. Morozova
Faculty of Physics, Moscow State University
Email: esold@phys.msu.ru
Russian Federation, Moscow, 119991
V. R. Gaidamachenko
Faculty of Physics, Moscow State University
Email: esold@phys.msu.ru
Russian Federation, Moscow, 119991
S. A. Daghesyan
Faculty of Physics, Moscow State University; Center for Quantum Technologies, Moscow State University
Email: esold@phys.msu.ru
Russian Federation, Moscow, 119991; Moscow, 119991
E. S. Soldatov
Faculty of Physics, Moscow State University; Center for Quantum Technologies, Moscow State University
Author for correspondence.
Email: esold@phys.msu.ru
Russian Federation, Moscow, 119991; Moscow, 119991
E. K. Beloglazkina
Faculty of Physics, Moscow State University
Email: esold@phys.msu.ru
Russian Federation, Moscow, 119991
Supplementary files
