Noncontact Detection of the Photosensitivity Inhomogeneities of HIT Heterostructures Based on α-Si:H/ c -Si

O. G. Koshelev; N. G. Vasilev; M. A. Reginevich; I. V. Schnaidschtein

doi:10.3103/S1062873818110138

Noncontact Detection of the Photosensitivity Inhomogeneities of HIT Heterostructures Based on α-Si:H/c-Si

作者: Koshelev O.G.¹, Vasilev N.G.¹, Reginevich M.A.², Schnaidschtein I.V.¹
隶属关系:
1. Faculty of Physics, Moscow State University
2. OOO ITR
期: 卷 82, 编号 11 (2018)
页面: 1421-1424
栏目: Article
URL: https://journals.rcsi.science/1062-8738/article/view/186694
DOI: https://doi.org/10.3103/S1062873818110138
ID: 186694

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详细

A setup for photosensitivity investigations of contactless silicon solar cell slabs with p–n junctions is considered. The results from photosensitivity contrast measurements for silicon solar cell slabs made of HIT heterostructures are analyzed.

作者简介

O. Koshelev

Faculty of Physics, Moscow State University

编辑信件的主要联系方式.
Email: scon282@phys.msu.ru
俄罗斯联邦, Moscow, 119991

N. Vasilev

Faculty of Physics, Moscow State University

Email: scon282@phys.msu.ru
俄罗斯联邦, Moscow, 119991

M. Reginevich

OOO ITR

Email: scon282@phys.msu.ru
俄罗斯联邦, Zelenograd, 124365

I. Schnaidschtein

Faculty of Physics, Moscow State University

Email: scon282@phys.msu.ru
俄罗斯联邦, Moscow, 119991

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