Studying the Elastic Stresses at the Edges of a Section of the SOI Heterostructure of a Micro-Electromechanical Pressure Transducer with an Isolated Tensoframe
- Авторлар: Sokolov L.V.1
-
Мекемелер:
- AO Ramenskoye Instrument Engineering Bureau
- Шығарылым: Том 83, № 11 (2019)
- Беттер: 1345-1348
- Бөлім: Article
- URL: https://journals.rcsi.science/1062-8738/article/view/187570
- DOI: https://doi.org/10.3103/S1062873819110248
- ID: 187570
Дәйексөз келтіру
Аннотация
The elastic stresses on the edges of a section of a micromechanical silicon tensoframe–glassy dielectric layer–silicon membrane structure are investigated, along with the topology of a local area on the surface of the transitional layer of a chip for a micro-electromechanical (MEMS) pressure transducer with an isolated 3D tensoframe.
Авторлар туралы
L. Sokolov
AO Ramenskoye Instrument Engineering Bureau
Хат алмасуға жауапты Автор.
Email: sokolov@niiao.ru
Ресей, Ramenskoe, 140103
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