Studying the Dynamic Effects in Memristive Structures Based on Bismuth Selenide: Does a Memristor Need a Shuttle Tail?

Аннотация

Transitions in the resistive switching of diode heterostructures based on bismuth selenide, in which bipolar resistive switching is implemented, are investigated. It is found that the time of transitions from one metastable state to another has a fast component on the order of microseconds and a slow component (a shuttle tail). Results are described using the model of a critical electric field, and the parameters of the investigated structures are calculated numerically.