Enviar artigo por via de e-mail Studying the Dynamic Effects in Memristive Structures Based on Bismuth Selenide: Does a Memristor Need a Shuttle Tail?
- Autores: Tulina N.A.1, Rossolenko A.N.1, Shmytko I.M.1, Kolesnikov N.N.1, Borisenko D.N.1, Sirotkin V.V.2, Borisenko I.Y.2, Tulin V.A.2
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Afiliações:
- Institute of Solid State Physics, Russian Academy of Sciences
- Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences
- Edição: Volume 83, Nº 6 (2019)
- Páginas: 740-744
- Seção: Article
- URL: https://journals.rcsi.science/1062-8738/article/view/187421
- DOI: https://doi.org/10.3103/S1062873819060340
- ID: 187421
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Resumo
Transitions in the resistive switching of diode heterostructures based on bismuth selenide, in which bipolar resistive switching is implemented, are investigated. It is found that the time of transitions from one metastable state to another has a fast component on the order of microseconds and a slow component (a shuttle tail). Results are described using the model of a critical electric field, and the parameters of the investigated structures are calculated numerically.
Sobre autores
N. Tulina
Institute of Solid State Physics, Russian Academy of Sciences
Autor responsável pela correspondência
Email: tulina@issp.ac.ru
Rússia, Chernogolovka, Moscow oblast, 142432
A. Rossolenko
Institute of Solid State Physics, Russian Academy of Sciences
Autor responsável pela correspondência
Email: anr@issp.ac.ru
Rússia, Chernogolovka, Moscow oblast, 142432
I. Shmytko
Institute of Solid State Physics, Russian Academy of Sciences
Email: anr@issp.ac.ru
Rússia, Chernogolovka, Moscow oblast, 142432
N. Kolesnikov
Institute of Solid State Physics, Russian Academy of Sciences
Email: anr@issp.ac.ru
Rússia, Chernogolovka, Moscow oblast, 142432
D. Borisenko
Institute of Solid State Physics, Russian Academy of Sciences
Email: anr@issp.ac.ru
Rússia, Chernogolovka, Moscow oblast, 142432
V. Sirotkin
Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences
Email: anr@issp.ac.ru
Rússia, Chernogolovka, Moscow oblast, 142432
I. Borisenko
Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences
Email: anr@issp.ac.ru
Rússia, Chernogolovka, Moscow oblast, 142432
V. Tulin
Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences
Email: anr@issp.ac.ru
Rússia, Chernogolovka, Moscow oblast, 142432
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