Studying the Dynamic Effects in Memristive Structures Based on Bismuth Selenide: Does a Memristor Need a Shuttle Tail?

N. A. Tulina; A. N. Rossolenko; I. M. Shmytko; N. N. Kolesnikov; D. N. Borisenko; V. V. Sirotkin; I. Yu. Borisenko; V. A. Tulin

doi:10.3103/S1062873819060340

Studying the Dynamic Effects in Memristive Structures Based on Bismuth Selenide: Does a Memristor Need a Shuttle Tail?

Authors: Tulina N.A.¹, Rossolenko A.N.¹, Shmytko I.M.¹, Kolesnikov N.N.¹, Borisenko D.N.¹, Sirotkin V.V.², Borisenko I.Y.², Tulin V.A.²
Affiliations:
1. Institute of Solid State Physics, Russian Academy of Sciences
2. Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences
Issue: Vol 83, No 6 (2019)
Pages: 740-744
Section: Article
URL: https://journals.rcsi.science/1062-8738/article/view/187421
DOI: https://doi.org/10.3103/S1062873819060340
ID: 187421

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Abstract

Transitions in the resistive switching of diode heterostructures based on bismuth selenide, in which bipolar resistive switching is implemented, are investigated. It is found that the time of transitions from one metastable state to another has a fast component on the order of microseconds and a slow component (a shuttle tail). Results are described using the model of a critical electric field, and the parameters of the investigated structures are calculated numerically.

About the authors

N. A. Tulina

Institute of Solid State Physics, Russian Academy of Sciences

Author for correspondence.
Email: tulina@issp.ac.ru
Russian Federation, Chernogolovka, Moscow oblast, 142432

A. N. Rossolenko

Institute of Solid State Physics, Russian Academy of Sciences

Author for correspondence.
Email: anr@issp.ac.ru
Russian Federation, Chernogolovka, Moscow oblast, 142432