Отправить статью по E-mail Polyamorphism in silicon nanocrystals under pressure
- Авторы: Ovsyuk N.N.1, Lyapin S.G.2
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Учреждения:
- Sobolev Institute of Geology and Mineralogy, Siberian Branch
- Institute for High Pressure Physics
- Выпуск: Том 80, № 11 (2016)
- Страницы: 1295-1297
- Раздел: Proceedings of the International Symposium “Ordering in Minerals and Alloys” OMA-18 and Chairman of the Organizing Committee of the International Symposium “Order, Disorder, and the Properties of Oxides” ODPO-18
- URL: https://journals.rcsi.science/1062-8738/article/view/184861
- DOI: https://doi.org/10.3103/S1062873816110241
- ID: 184861
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Аннотация
Many works have been devoted to describing mechanisms of pressure-induced polyamorphism. This phenomenon is apparent in the phase transition between low- and high-density amorphous states (LDA and HDA) upon the application of pressure, resulting in substantial changes in the structure and physical properties of the amorphous state. The HDA–LDA transition in Si nanocrystals is observed when recording Raman spectra in situ during decompression at 6.68 GPa.
Об авторах
N. Ovsyuk
Sobolev Institute of Geology and Mineralogy, Siberian Branch
Автор, ответственный за переписку.
Email: ovsyuk@igm.nsc.ru
Россия, Novosibirsk, 630090
S. Lyapin
Institute for High Pressure Physics
Email: ovsyuk@igm.nsc.ru
Россия, Troitsk, Moscow oblast, 108840
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