Мақаланы E-mail арқылы жіберу Polyamorphism in silicon nanocrystals under pressure
- Авторлар: Ovsyuk N.N.1, Lyapin S.G.2
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Мекемелер:
- Sobolev Institute of Geology and Mineralogy, Siberian Branch
- Institute for High Pressure Physics
- Шығарылым: Том 80, № 11 (2016)
- Беттер: 1295-1297
- Бөлім: Proceedings of the International Symposium “Ordering in Minerals and Alloys” OMA-18 and Chairman of the Organizing Committee of the International Symposium “Order, Disorder, and the Properties of Oxides” ODPO-18
- URL: https://journals.rcsi.science/1062-8738/article/view/184861
- DOI: https://doi.org/10.3103/S1062873816110241
- ID: 184861
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Аннотация
Many works have been devoted to describing mechanisms of pressure-induced polyamorphism. This phenomenon is apparent in the phase transition between low- and high-density amorphous states (LDA and HDA) upon the application of pressure, resulting in substantial changes in the structure and physical properties of the amorphous state. The HDA–LDA transition in Si nanocrystals is observed when recording Raman spectra in situ during decompression at 6.68 GPa.
Авторлар туралы
N. Ovsyuk
Sobolev Institute of Geology and Mineralogy, Siberian Branch
Хат алмасуға жауапты Автор.
Email: ovsyuk@igm.nsc.ru
Ресей, Novosibirsk, 630090
S. Lyapin
Institute for High Pressure Physics
Email: ovsyuk@igm.nsc.ru
Ресей, Troitsk, Moscow oblast, 108840
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