Plastic relaxation anisotropy in epitaxial films grown on miscut Si(001) substrates
- 作者: Ilin A.S.1, Trukhanov E.M.1, Kolesnikov A.V.1, Loshkarev I.D.1, Pchelyakov O.P.1
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隶属关系:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- 期: 卷 81, 编号 5 (2017)
- 页面: 598-601
- 栏目: Proceedings of the “OMA-19”, “ODPO-19”
- URL: https://journals.rcsi.science/1062-8738/article/view/185080
- DOI: https://doi.org/10.3103/S1062873817050112
- ID: 185080
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详细
A way of calculating the structural parameters of semiconductor epitaxial layers grown on miscut (0 0 1) substrates is developed. It is shown that the difference between the tensor of film elastic strains and the spherical tensor of strains translating the film’s crystal lattice into the substrate’s lattice is a tensor whose components are proportional to X-ray strains. The technique is used to analyze GaAs and Ge0.2Si0.8 films grown on (1 1 13) Si substrates. The anisotropy of the degree of plastic relaxation is established for lateral directions perpendicular and parallel to the interfacial steps in the GeSi film. It is proposed that noninteger Miller indices be used to denote the direction and value of the rotation of the film’s crystal lattice with respect to the substrate lattice.
作者简介
A. Ilin
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: trukh@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
E. Trukhanov
Rzhanov Institute of Semiconductor Physics, Siberian Branch
编辑信件的主要联系方式.
Email: trukh@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
A. Kolesnikov
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: trukh@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
I. Loshkarev
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: trukh@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
O. Pchelyakov
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: trukh@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
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