Photoluminescent properties of vitreous semiconductor systems (GeSe2)1–xTlx and (GeSe3)1–xTlx

Аннотация

The photoluminescence (PL) of glasses of the (GeSe₂)_1–xTl_x and (GeSe₃)_1–xTl_x systems (0 ≤ x ≤ 0.1) at T = 77 K is studied. PL spectra of Gaussian shape correspond to intrinsic defects with negative correlation energy. It is found that the shapes of the spectra do not change with the growth in x in the systems. No new emission bands are observed, the PL spectra shift toward lower energies, the intensity of emission falls, and its half-width increases. The kinetics of PL fatigue differs for the two systems and is characterized by a single curve for each, irrespective of the Tl content in the system.