Email this article Photoluminescent properties of vitreous semiconductor systems (GeSe2)1–xTlx and (GeSe3)1–xTlx
- Authors: Babaev A.A.1
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Affiliations:
- Amirkhanov Institute of Physics, Dagestan Scientific Center
- Issue: Vol 80, No 6 (2016)
- Pages: 714-717
- Section: Proceedings of the Interdisciplinary Symposium “Ordering in Minerals and Alloys” OMA-18 and Proceedings of the International Interdisciplinary Symposium “Order, Disorder, and Properties of Oxides” ODPO-18
- URL: https://journals.rcsi.science/1062-8738/article/view/184562
- DOI: https://doi.org/10.3103/S1062873816060058
- ID: 184562
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Abstract
The photoluminescence (PL) of glasses of the (GeSe2)1–xTlx and (GeSe3)1–xTlx systems (0 ≤ x ≤ 0.1) at T = 77 K is studied. PL spectra of Gaussian shape correspond to intrinsic defects with negative correlation energy. It is found that the shapes of the spectra do not change with the growth in x in the systems. No new emission bands are observed, the PL spectra shift toward lower energies, the intensity of emission falls, and its half-width increases. The kinetics of PL fatigue differs for the two systems and is characterized by a single curve for each, irrespective of the Tl content in the system.
About the authors
A. A. Babaev
Amirkhanov Institute of Physics, Dagestan Scientific Center
Author for correspondence.
Email: babaev-arif@mail.ru
Russian Federation, Makhachkala, 367003
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