Photoluminescent properties of vitreous semiconductor systems (GeSe2)1–xTlx and (GeSe3)1–xTlx

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The photoluminescence (PL) of glasses of the (GeSe2)1–xTlx and (GeSe3)1–xTlx systems (0 ≤ x ≤ 0.1) at T = 77 K is studied. PL spectra of Gaussian shape correspond to intrinsic defects with negative correlation energy. It is found that the shapes of the spectra do not change with the growth in x in the systems. No new emission bands are observed, the PL spectra shift toward lower energies, the intensity of emission falls, and its half-width increases. The kinetics of PL fatigue differs for the two systems and is characterized by a single curve for each, irrespective of the Tl content in the system.

Sobre autores

A. Babaev

Amirkhanov Institute of Physics, Dagestan Scientific Center

Autor responsável pela correspondência
Email: babaev-arif@mail.ru
Rússia, Makhachkala, 367003

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