Temperature quenching of the luminescence of SiV centers in CVD diamond films

A. S. Emelyanova; A. L. Rakevich; E. F. Martynovich; V. P. Mironov; A. P. Bolshakov; V. S. Sedov; V. G. Ralchenko; V. I. Konov

doi:10.3103/S106287381709009X

Temperature quenching of the luminescence of SiV centers in CVD diamond films

Autores: Emelyanova A.S.¹, Rakevich A.L.¹, Martynovich E.F.¹, Mironov V.P.¹, Bolshakov A.P.², Sedov V.S.², Ralchenko V.G.²^,3, Konov V.I.²
Afiliações:
1. Institute of Laser Physics (Irkutsk Branch), Siberian Branch
2. Prokhorov General Physics Institute
3. Harbin Institute of Technology
Edição: Volume 81, Nº 9 (2017)
Páginas: 1154-1158
Seção: Article
URL: https://journals.rcsi.science/1062-8738/article/view/185193
DOI: https://doi.org/10.3103/S106287381709009X
ID: 185193

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Resumo

The kinetic characteristics and temperature quenching of the luminescence of optical centers of silicon vacancies (SiVs) in diamond films grown in microwave plasma on substrates of aluminum nitride and synthetic diamond are investigated via laser excitation at a wavelength of 640 nm.