Ion-beam formation and track modification of InAs nanoclusters in silicon and silica


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The implantation formation of InAs nanoclusters in silicon and silica and their modification via irradiation with Xe ions with an energy of 167 MeV and a fluence of 3 × 1014 cm–2 are studied. It is found that post-implantation annealing and irradiation with high-energy ions alter the size and shape of nanoclusters and cause structural transformations within them. The ordering of nanoclusters and their elongation along the trajectory of Xe ions in a SiO2 matrix is observed.

Sobre autores

F. Komarov

Sevchenko Institute of Applied Physical Problems

Autor responsável pela correspondência
Email: komarovf@bsu.by
Belarus, Minsk, 220030

O. Milchanin

Sevchenko Institute of Applied Physical Problems

Email: komarovf@bsu.by
Belarus, Minsk, 220030

V. Skuratov

Joint Institute for Nuclear Research

Email: komarovf@bsu.by
Rússia, Dubna, 141980

M. Makhavikou

Sevchenko Institute of Applied Physical Problems

Email: komarovf@bsu.by
Belarus, Minsk, 220030

A. Janse van Vuuren

Centre for High Resolution Transmission Electron Microscopy

Email: komarovf@bsu.by
República da África do Sul, Port Elizabeth, 6031

J. Neethling

Centre for High Resolution Transmission Electron Microscopy

Email: komarovf@bsu.by
República da África do Sul, Port Elizabeth, 6031

E. Wendler

Friedrich Schiller University Jena

Email: komarovf@bsu.by
Alemanha, Jena, 07743

L. Vlasukova

Belarusian State University

Email: komarovf@bsu.by
Belarus, Minsk, 220030

I. Parkhomenko

Belarusian State University

Email: komarovf@bsu.by
Belarus, Minsk, 220030

V. Yuvchenko

Sevchenko Institute of Applied Physical Problems

Email: komarovf@bsu.by
Belarus, Minsk, 220030

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