Ion-beam formation and track modification of InAs nanoclusters in silicon and silica

F. F. Komarov; O. V. Milchanin; V. A. Skuratov; M. A. Makhavikou; A. Janse van Vuuren; J. N. Neethling; E. Wendler; L. A. Vlasukova; I. N. Parkhomenko; V. N. Yuvchenko

doi:10.3103/S106287381602012X

Ion-beam formation and track modification of InAs nanoclusters in silicon and silica

Авторлар: Komarov F.F.¹, Milchanin O.V.¹, Skuratov V.A.², Makhavikou M.A.¹, Janse van Vuuren A.³, Neethling J.N.³, Wendler E.⁴, Vlasukova L.A.⁵, Parkhomenko I.N.⁵, Yuvchenko V.N.¹
Мекемелер:
1. Sevchenko Institute of Applied Physical Problems
2. Joint Institute for Nuclear Research
3. Centre for High Resolution Transmission Electron Microscopy
4. Friedrich Schiller University Jena
5. Belarusian State University
Шығарылым: Том 80, № 2 (2016)
Беттер: 141-145
Бөлім: Proceedings of the 22nd International Conference “Ion-Surface Interaction (ISI-2015)”
URL: https://journals.rcsi.science/1062-8738/article/view/183827
DOI: https://doi.org/10.3103/S106287381602012X
ID: 183827

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The implantation formation of InAs nanoclusters in silicon and silica and their modification via irradiation with Xe ions with an energy of 167 MeV and a fluence of 3 × 10¹⁴ cm^–2 are studied. It is found that post-implantation annealing and irradiation with high-energy ions alter the size and shape of nanoclusters and cause structural transformations within them. The ordering of nanoclusters and their elongation along the trajectory of Xe ions in a SiO₂ matrix is observed.