Features of the Temperature Dependence of Graphene Oxide Resistivity
- 作者: Babaev A.A.1, Zobov M.E.1, Terukov E.I.2, Levitskii V.S.2
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隶属关系:
- Amirkhanov Institute of Physics, Dagestan Science Center
- Ioffe Institute
- 期: 卷 82, 编号 7 (2018)
- 页面: 815-816
- 栏目: Article
- URL: https://journals.rcsi.science/1062-8738/article/view/185444
- DOI: https://doi.org/10.3103/S1062873818070079
- ID: 185444
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详细
The Raman spectra and the temperature dependence of the resistivity of graphene oxide grown upon continuous heating and cooling on a glass substrate is studied in air in the temperature interval of 300–550 K. It is established that the intensity of the D-peak falls relative to the G-peak, the maximum of which shifts toward lower frequencies in Raman spectra. Partial removal of oxygen-containing functional groups is accompanied by a reduction in resistivity from 5.6 × 109 to 5.4 × 109 Ω. In the temperature intervals of 300–350 K and 300–375 K, the resistivity is constant upon graphene oxide heating and cooling, respectively.
作者简介
A. Babaev
Amirkhanov Institute of Physics, Dagestan Science Center
编辑信件的主要联系方式.
Email: babaev-arif@mail.ru
俄罗斯联邦, Makhachkala, 367003
M. Zobov
Amirkhanov Institute of Physics, Dagestan Science Center
Email: babaev-arif@mail.ru
俄罗斯联邦, Makhachkala, 367003
E. Terukov
Ioffe Institute
Email: babaev-arif@mail.ru
俄罗斯联邦, St. Petersburg, 194021
V. Levitskii
Ioffe Institute
Email: babaev-arif@mail.ru
俄罗斯联邦, St. Petersburg, 194021
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