Features of the Temperature Dependence of Graphene Oxide Resistivity
- Authors: Babaev A.A.1, Zobov M.E.1, Terukov E.I.2, Levitskii V.S.2
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Affiliations:
- Amirkhanov Institute of Physics, Dagestan Science Center
- Ioffe Institute
- Issue: Vol 82, No 7 (2018)
- Pages: 815-816
- Section: Article
- URL: https://journals.rcsi.science/1062-8738/article/view/185444
- DOI: https://doi.org/10.3103/S1062873818070079
- ID: 185444
Cite item
Abstract
The Raman spectra and the temperature dependence of the resistivity of graphene oxide grown upon continuous heating and cooling on a glass substrate is studied in air in the temperature interval of 300–550 K. It is established that the intensity of the D-peak falls relative to the G-peak, the maximum of which shifts toward lower frequencies in Raman spectra. Partial removal of oxygen-containing functional groups is accompanied by a reduction in resistivity from 5.6 × 109 to 5.4 × 109 Ω. In the temperature intervals of 300–350 K and 300–375 K, the resistivity is constant upon graphene oxide heating and cooling, respectively.
About the authors
A. A. Babaev
Amirkhanov Institute of Physics, Dagestan Science Center
Author for correspondence.
Email: babaev-arif@mail.ru
Russian Federation, Makhachkala, 367003
M. E. Zobov
Amirkhanov Institute of Physics, Dagestan Science Center
Email: babaev-arif@mail.ru
Russian Federation, Makhachkala, 367003
E. I. Terukov
Ioffe Institute
Email: babaev-arif@mail.ru
Russian Federation, St. Petersburg, 194021
V. S. Levitskii
Ioffe Institute
Email: babaev-arif@mail.ru
Russian Federation, St. Petersburg, 194021
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