Email this article Determining the structure of energy in heterostructures with diffuse interfaces
- Authors: Abramkin D.S.1,2, Bakarov A.K.1, Kolotovkina D.A.1,2, Gutakovskii A.K.1,2, Shamirzaev T.S.1,2,3
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Affiliations:
- Rzhanov Institute of Semiconductor Physics
- Novosibirsk State University
- Ural Federal University
- Issue: Vol 81, No 9 (2017)
- Pages: 1052-1057
- Section: Article
- URL: https://journals.rcsi.science/1062-8738/article/view/185173
- DOI: https://doi.org/10.3103/S1062873817090039
- ID: 185173
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Abstract
A standard way of determining the type of energy structure in heterostructures, based on analyzing the spectral shift of the band of steady-state photoluminescence (PL) as a function of the excitation power density, is developed with allowance for the effect of the fluctuation tails of the density of energy states. The technique is validated for InAs/AlAs, GaAs/AlAs, and AlSbyAs1–y/AlAs heterostructures with quantum wells.
About the authors
D. S. Abramkin
Rzhanov Institute of Semiconductor Physics; Novosibirsk State University
Author for correspondence.
Email: demid@isp.nsc.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090
A. K. Bakarov
Rzhanov Institute of Semiconductor Physics
Email: demid@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
D. A. Kolotovkina
Rzhanov Institute of Semiconductor Physics; Novosibirsk State University
Email: demid@isp.nsc.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090
A. K. Gutakovskii
Rzhanov Institute of Semiconductor Physics; Novosibirsk State University
Email: demid@isp.nsc.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090
T. S. Shamirzaev
Rzhanov Institute of Semiconductor Physics; Novosibirsk State University; Ural Federal University
Email: demid@isp.nsc.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090; Yekaterinburg, 620002
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