Email this article Method for predicting the effects of radiative relaxation in bipolar integrated circuits
- Authors: Panyushkin N.N.1, Matveev N.N.1
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Affiliations:
- Morozov State University of Forestry Engineering
- Issue: Vol 80, No 9 (2016)
- Pages: 1152-1154
- Section: Proceedings of the 23rd International Scientific Conference “Relaxation Phenomena in Solids,” Dedicated to the Centenary of the Birth of V.S. Postnikov
- URL: https://journals.rcsi.science/1062-8738/article/view/184834
- DOI: https://doi.org/10.3103/S1062873816090343
- ID: 184834
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Abstract
A method for parametrically predicting the level of non-malfunction work for bipolar integrated circuits under the effects of pulsed gamma neutron radiation with allowance for the relaxation of short-term displacement effects is proposed. The parameters that determine the production margins and radiation sensitivity of parameter UOL (i.e., the low-level output voltage, the degradation of which generally determines the radiation resistance of bipolar digital integrated circuits) were selected as the ones used in predictions.
About the authors
N. N. Panyushkin
Morozov State University of Forestry Engineering
Author for correspondence.
Email: nnpan@yandex.ru
Russian Federation, Voronezh, 394087
N. N. Matveev
Morozov State University of Forestry Engineering
Email: nnpan@yandex.ru
Russian Federation, Voronezh, 394087
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