Method for predicting the effects of radiative relaxation in bipolar integrated circuits

Аннотация

A method for parametrically predicting the level of non-malfunction work for bipolar integrated circuits under the effects of pulsed gamma neutron radiation with allowance for the relaxation of short-term displacement effects is proposed. The parameters that determine the production margins and radiation sensitivity of parameter U_OL (i.e., the low-level output voltage, the degradation of which generally determines the radiation resistance of bipolar digital integrated circuits) were selected as the ones used in predictions.