Amplification of a Raman Scattering Signal by Carbon Nanotubes
- Авторлар: Eletskii A.V.1, Sarychev A.K.2, Boginskaya I.A.2, Bocharov G.S.1, Gaiduchenko I.A.3,4, Egin M.S.1, Ivanov A.V.2, Kurochkin I.N.5, Ryzhikov I.A.2, Fedorov G.E.6,7
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Мекемелер:
- National Research University Moscow Power Engineering Institute
- Institute of Theoretical and Applied Electrodynamics, Russian Academy of Sciences
- National Research Center Kurchatov Institute
- Moscow State Pedagogical University
- Emanuel Institute of Biochemical Physics, Russian Academy of Sciences
- National Research University of Electronic Technology
- Moscow Institute of Physics and Technology (State University)
- Шығарылым: Том 63, № 12 (2018)
- Беттер: 496-498
- Бөлім: Physics
- URL: https://journals.rcsi.science/1028-3358/article/view/193036
- DOI: https://doi.org/10.1134/S1028335818120066
- ID: 193036
Дәйексөз келтіру
Аннотация
The effect of Raman scattering (RLS) signal amplification by carbon nanotubes (CNTs) was studied. Single-layered nanotubes were synthesized by the chemical vapor deposition (CVD) method using methane as a carbon-containing gas. The object of study used was water, the Raman spectrum of which is rather well known. Amplification of the Raman scattering signal by several hundred percent was attained in our work. The maximum amplification of a Raman scattering signal was shown to be achieved at an optimal density of nanotubes on a substrate. This effect was due to the scattering and screening of plasmons excited in CNTs by neighboring nanotubes. The amplification mechanism and the possibilities of optimization for this effect were discussed on the basis of the theory of plasmon resonance in carbon nanotubes.
Авторлар туралы
A. Eletskii
National Research University Moscow Power Engineering Institute
Хат алмасуға жауапты Автор.
Email: Eletskii@mail.ru
Ресей, Moscow, 111250
A. Sarychev
Institute of Theoretical and Applied Electrodynamics, Russian Academy of Sciences
Email: BocharovGS@mail.ru
Ресей, Moscow, 125412
I. Boginskaya
Institute of Theoretical and Applied Electrodynamics, Russian Academy of Sciences
Email: BocharovGS@mail.ru
Ресей, Moscow, 125412
G. Bocharov
National Research University Moscow Power Engineering Institute
Хат алмасуға жауапты Автор.
Email: BocharovGS@mail.ru
Ресей, Moscow, 111250
I. Gaiduchenko
National Research Center Kurchatov Institute; Moscow State Pedagogical University
Email: BocharovGS@mail.ru
Ресей, Moscow, 123182; Moscow, 119991
M. Egin
National Research University Moscow Power Engineering Institute
Email: BocharovGS@mail.ru
Ресей, Moscow, 111250
A. Ivanov
Institute of Theoretical and Applied Electrodynamics, Russian Academy of Sciences
Email: BocharovGS@mail.ru
Ресей, Moscow, 125412
I. Kurochkin
Emanuel Institute of Biochemical Physics, Russian Academy of Sciences
Email: BocharovGS@mail.ru
Ресей, Moscow, 119991
I. Ryzhikov
Institute of Theoretical and Applied Electrodynamics, Russian Academy of Sciences
Email: BocharovGS@mail.ru
Ресей, Moscow, 125412
G. Fedorov
National Research University of Electronic Technology; Moscow Institute of Physics and Technology (State University)
Email: BocharovGS@mail.ru
Ресей, Moscow; Dolgoprudnyi, Moscow oblast, 141700
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